Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11045066Application Date: 2005-01-31
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Publication No.: US07681107B2Publication Date: 2010-03-16
- Inventor: Makoto Muranushi , Masami Kanasugi , Shoji Taniguchi , Koichi Kuroiwa , Norihiro Ikeda
- Applicant: Makoto Muranushi , Masami Kanasugi , Shoji Taniguchi , Koichi Kuroiwa , Norihiro Ikeda
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2004-314555 20041028
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A semiconductor having an internal memory of the present invention comprises a first memory copying and holding a data held in a storage device; a second memory holding a check code of the data held in the first memory, and being constantly supplied with a source voltage not lower than a data-holding-guarantee voltage; a data check unit detecting error in the data held by the first memory based on the check code; and reloading units copying only the data corresponded to the block having a data error detected therein by the data check unit, from the storage device to the first memory, to make it possible to detect any error in the data held in the first memory to thereby guarantee the data, and to lower the source voltage to be supplied to the first memory.
Public/Granted literature
- US20060095829A1 Semiconductor device Public/Granted day:2006-05-04
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