Invention Grant
US07681159B2 System and method for detecting defects in a semiconductor during manufacturing thereof
有权
用于在其制造期间检测半导体中的缺陷的系统和方法
- Patent Title: System and method for detecting defects in a semiconductor during manufacturing thereof
- Patent Title (中): 用于在其制造期间检测半导体中的缺陷的系统和方法
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Application No.: US11812774Application Date: 2007-06-21
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Publication No.: US07681159B2Publication Date: 2010-03-16
- Inventor: Ryoichi Matsuoka , Hidetoshi Morokuma , Takumichi Sutani
- Applicant: Ryoichi Matsuoka , Hidetoshi Morokuma , Takumichi Sutani
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2006-174399 20060623
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.
Public/Granted literature
- US20080016481A1 System and method for detecting a defect Public/Granted day:2008-01-17
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