Invention Grant
US07682452B2 Apparatus and methods of growing void-free crystalline ceramic products
失效
生长无空隙结晶陶瓷产品的装置和方法
- Patent Title: Apparatus and methods of growing void-free crystalline ceramic products
- Patent Title (中): 生长无空隙结晶陶瓷产品的装置和方法
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Application No.: US11783358Application Date: 2007-04-09
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Publication No.: US07682452B2Publication Date: 2010-03-23
- Inventor: John O. Outwater
- Applicant: John O. Outwater
- Applicant Address: US MA Cambridge
- Assignee: Sapphire Systems Inc.
- Current Assignee: Sapphire Systems Inc.
- Current Assignee Address: US MA Cambridge
- Agency: Morgan Lewis & Bockius LLP
- Main IPC: C30B15/34
- IPC: C30B15/34
Abstract:
A method and apparatus for eliminating voids and improving crystal quality in shaped ceramic product, e.g. sapphire fiber or silicon sheet, from a melt by using a sloped die tip. The sloped die tip or array thereof comprises an outer sidewall which is sloped outwardly at an angle of 5° to 40° from the vertical.
Public/Granted literature
- US20080245292A1 Apparatus and methods of growing void-free crystalline ceramic products Public/Granted day:2008-10-09
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