Invention Grant
- Patent Title: Method for casting polycrystalline silicon
- Patent Title (中): 多晶硅铸造方法
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Application No.: US11503963Application Date: 2006-08-15
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Publication No.: US07682472B2Publication Date: 2010-03-23
- Inventor: Kyojiro Kaneko
- Applicant: Kyojiro Kaneko
- Applicant Address: JP Wakayama
- Assignee: Sumco Solar Corporation
- Current Assignee: Sumco Solar Corporation
- Current Assignee Address: JP Wakayama
- Agency: Clark & Brody
- Priority: JP2005-237608 20050818
- Main IPC: B22D17/00
- IPC: B22D17/00

Abstract:
In melting and casting by a water-cooled crucible induction melting technique, a partition means is inserted on top portion of a melt, and a new raw material for is charged on an upper side of the partition means to continue the melting and casting. Therefore, the continuous casting can be kept while avoiding mixture of the melt on a lower side of with the melt on an upper side of the partition means. A partition plate or a partition plate with legs can be used as the partition means. When the present invention is applied to production of a silicon ingot used for a solar cell and the like, productivity is largely improved, which allows costs to be remarkably reduced in solar energy generation. Therefore, the present invention can widely be utilized as the method for casting a polycrystalline-silicon ingot for a solar cell.
Public/Granted literature
- US20070039544A1 Method for casting polycrystalline silicon Public/Granted day:2007-02-22
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