Invention Grant
- Patent Title: Nano-imprint lithography method involving substrate pressing
- Patent Title (中): 涉及基片压制的纳米压印光刻方法
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Application No.: US10539875Application Date: 2003-12-22
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Publication No.: US07682515B2Publication Date: 2010-03-23
- Inventor: Corinne Perret , Cecile Gourgon , Stephan Landis
- Applicant: Corinne Perret , Cecile Gourgon , Stephan Landis
- Applicant Address: FR Paris FR Paris
- Assignee: Commissarieat A l'Energie Atomique,Centre National De La Recherche
- Current Assignee: Commissarieat A l'Energie Atomique,Centre National De La Recherche
- Current Assignee Address: FR Paris FR Paris
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0216540 20021223
- International Application: PCT/FR03/03866 WO 20031222
- International Announcement: WO2004/059386 WO 20040715
- Main IPC: C03C15/00
- IPC: C03C15/00

Abstract:
The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.
Public/Granted literature
- US20060183060A1 Nano-imprint lithography method involving substrate pressing Public/Granted day:2006-08-17
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