Invention Grant
- Patent Title: Method of processing substrate, and method of and program for manufacturing electronic device
- Patent Title (中): 基板的处理方法，电子器件的制造方法及程序
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Application No.: US11353132Application Date: 2006-02-14
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Publication No.: US07682517B2Publication Date: 2010-03-23
- Inventor: Eiichi Nishimura , Kenya Iwasaki
- Applicant: Eiichi Nishimura , Kenya Iwasaki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-036716 20050214; JP2005-278843 20050926
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
Public/Granted literature
- US20060194435A1 Method of processing substrate, and method of and program for manufacturing electronic device Public/Granted day:2006-08-31
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