Invention Grant
US07682552B2 Capacitive measurement method and system for nanoimprint process monitoring
失效
纳米压印过程监测的电容测量方法和系统
- Patent Title: Capacitive measurement method and system for nanoimprint process monitoring
- Patent Title (中): 纳米压印过程监测的电容测量方法和系统
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Application No.: US10851113Application Date: 2004-05-24
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Publication No.: US07682552B2Publication Date: 2010-03-23
- Inventor: Chin-Chung Nien , Ta-Chuan Liu , Hong Hocheng
- Applicant: Chin-Chung Nien , Ta-Chuan Liu , Hong Hocheng
- Applicant Address: TW HsinChu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW HsinChu
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW93108225A 20040326
- Main IPC: G01B11/00
- IPC: G01B11/00

Abstract:
The present invention relates to a capacitive measurement method and system for a nanoimprint process, which arranges a plurality of electrode plates on both the backside of the master mold and the surface of the supporting base carrying the wafer substrate to form a plurality of capacitive structures. By monitoring the capacitance variation signal caused by the continuous variations in the thickness and the material properties of the resist during the imprint process, the status of the resist can be monitored and recorded, which is used as the references for determining the timing to demold in the nanoimprint process and for maintaining the flatness of the resist. Accordingly, the nanoimprint process can be automated easier and the quality and the throughput of of the nanometer scaled imprint product can be improved.
Public/Granted literature
- US20050212178A1 Capacitive measurement method and system for nanoimprint process monitoring Public/Granted day:2005-09-29
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