Invention Grant
- Patent Title: Methods and system for determining pitch of lithographic features
- Patent Title (中): 用于确定光刻特征的间距的方法和系统
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Application No.: US11554725Application Date: 2006-10-31
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Publication No.: US07682759B2Publication Date: 2010-03-23
- Inventor: Sean C. O'Brien
- Applicant: Sean C. O'Brien
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method is provided for determining pitch of lithographic features of a mask. The method includes determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask, applying the bias to a plurality of lithographic features of the mask, and determining pitch of the plurality of lithographic features based on interactions between the biased plurality of lithographic features of the mask.
Public/Granted literature
- US20080168416A1 Methods and systems for determining pitch of lithographic features Public/Granted day:2008-07-10
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