Invention Grant
US07682761B2 Method of fabricating a grayscale mask using a wafer bonding process
失效
使用晶片接合工艺制造灰度掩模的方法
- Patent Title: Method of fabricating a grayscale mask using a wafer bonding process
- Patent Title (中): 使用晶片接合工艺制造灰度掩模的方法
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Application No.: US11709008Application Date: 2007-02-20
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Publication No.: US07682761B2Publication Date: 2010-03-23
- Inventor: Wei Gao , Bruce D. Ulrich , Yoshi Ono
- Applicant: Wei Gao , Bruce D. Ulrich , Yoshi Ono
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiOxNy on the SRO microlens array; CMP to planarize the layer of SiOxNy removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiOxNy to a quartz reticle plate; and etching to remove Si3N4 from the bonded structure to form a grayscale mask reticle.
Public/Granted literature
- US20080197107A1 Method of fabricating a grayscale mask using a wafer bonding process Public/Granted day:2008-08-21
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