Invention Grant
US07682841B2 Method of forming integrated circuit having a magnetic tunnel junction device
有权
形成具有磁性隧道结装置的集成电路的方法
- Patent Title: Method of forming integrated circuit having a magnetic tunnel junction device
- Patent Title (中): 形成具有磁性隧道结装置的集成电路的方法
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Application No.: US11743497Application Date: 2007-05-02
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Publication No.: US07682841B2Publication Date: 2010-03-23
- Inventor: Faiz Dahmani , Gill Yong Lee
- Applicant: Faiz Dahmani , Gill Yong Lee
- Applicant Address: DE Munich FR Corbeil Essonnes
- Assignee: Qimonda AG,Altis Semiconductor, SNC.
- Current Assignee: Qimonda AG,Altis Semiconductor, SNC.
- Current Assignee Address: DE Munich FR Corbeil Essonnes
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing an integrated circuit having a magnetic tunnel junction device is disclosed. The method includes depositing a bottom pinning structure above the bottom conductive structure. A first ferromagnetic structure is deposited above the bottom pinning structure in a chamber. A tunnel barrier structure is deposited above the first ferromagnetic layer structure in the chamber, and a second ferromagnetic structure is deposited above the tunnel barrier structure of the magnetic tunnel junction device in another chamber.
Public/Granted literature
- US20080274567A1 METHOD OF FORMING INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE Public/Granted day:2008-11-06
Information query
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