Invention Grant
- Patent Title: Fabrication method of substrate-free light emitting diode
- Patent Title (中): 无基板发光二极管的制造方法
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Application No.: US11461436Application Date: 2006-07-31
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Publication No.: US07682855B2Publication Date: 2010-03-23
- Inventor: Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
- Applicant: Chien-Cheng Yang , Zhi-Cheng Hsiao , Gen-Wen Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW95101039A 20060111
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.
Public/Granted literature
- US20070158639A1 SUBSTRATE-FREE LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF Public/Granted day:2007-07-12
Information query
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