Invention Grant
US07682866B2 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
有权
非平面化，自对准，非易失性相变存储器阵列和形成方法
- Patent Title: Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
- Patent Title (中): 非平面化，自对准，非易失性相变存储器阵列和形成方法
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Application No.: US11335329Application Date: 2006-01-19
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Publication No.: US07682866B2Publication Date: 2010-03-23
- Inventor: Mark W. Hart , Christie R. K. Marrian , Gary M. McClelland , Charles T. Rettner , Hemantha K. Wickramasinghe
- Applicant: Mark W. Hart , Christie R. K. Marrian , Gary M. McClelland , Charles T. Rettner , Hemantha K. Wickramasinghe
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb I.P. Law Firm, LLC
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/06 ; H01L21/00 ; H01L21/82 ; G11C11/00
Abstract:
A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
Public/Granted literature
- US20060145134A1 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation Public/Granted day:2006-07-06
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