Method of fabricating flash memory device

Invention Grant

US07682904B2 Method of fabricating flash memory device 失效

Title translation: 制造闪存设备的方法

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Patent Title: Method of fabricating flash memory device
Patent Title (中): 制造闪存设备的方法
Application No.: US12131626

Application Date: 2008-06-02
Publication No.: US07682904B2

Publication Date: 2010-03-23
Inventor: Eun Soo Kim , Jung Geun Kim , Suk Joong Kim
Applicant: Eun Soo Kim , Jung Geun Kim , Suk Joong Kim
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon-si
Agency: Marshall, Gerstein & Borun LLP
Priority: KR10-2007-0071643 20070718
Main IPC: H01L21/8234
IPC: H01L21/8234

Method of fabricating flash memory device

Abstract:

The present invention relates to a method of fabricating a flash memory device and includes forming an air-gap having a low dielectric constant between word lines and floating gates. Further, a tungsten nitride (WN) layer is formed on sidewalls of a tungsten (W) layer for a control gate. Hence, the cross section of the control gate that is finally formed can be increased while preventing abnormal oxidization of the tungsten layer in a subsequent annealing process. The method of the present invention can improve interference between neighboring word lines and, thus improve the reliability of a device. Accordingly, a robust high-speed device can be implemented.

Abstract(Chinese):

本发明涉及一种制造闪速存储器件的方法，包括在字线和浮栅之间形成具有低介电常数的气隙。此外，在用于控制栅极的钨（W）层的侧壁上形成氮化钨（WN）层。因此，可以提高最终形成的控制栅极的横截面，同时防止随后的退火工艺中钨层的异常氧化。本发明的方法可以改善相邻字线之间的干扰，从而提高设备的可靠性。因此，可以实现鲁棒的高速设备。

Public/Granted literature

US20090023279A1 METHOD OF FABRICATING FLASH MEMORY DEVICE Public/Granted day:2009-01-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺