A method of forming a sub-lithographic charge storage element on a semiconductor substrate is provided. The method can involve providing first and second layers on a semiconductor substrate, a thickness of the first layer being larger than a thickness of the second layer; forming a spacer adjacent a side surface of the first layer and on a portion of an upper surface of the second layer; and removing an exposed portion of the second layer that is not covered by the spacer. By removing the exposed portion of the second layer while leaving a portion of the second layer that is protected by the spacer, the method can make a sub-lithographic charge storage element from the remaining portion of the second layer on the semiconductor substrate.