Invention Grant
- Patent Title: Vertical trench gate transistor semiconductor device and method for fabricating the same
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Application No.: US12216274Application Date: 2008-07-02
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Publication No.: US07682909B2Publication Date: 2010-03-23
- Inventor: Shuji Mizokuchi , Kazuaki Tsunoda
- Applicant: Shuji Mizokuchi , Kazuaki Tsunoda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-360997 20041214
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.
Public/Granted literature
- US20080299727A1 Vertical trench gate transistor semiconductor device and method for fabricating the same Public/Granted day:2008-12-04
Information query
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