Invention Grant
US07682912B2 III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same
有权
III-V族化合物半导体器件，其具有与沟道电荷极性相反的电荷的存取区域中的表面层及其制造方法
- Patent Title: III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same
- Patent Title (中): III-V族化合物半导体器件，其具有与沟道电荷极性相反的电荷的存取区域中的表面层及其制造方法
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Application No.: US11554859Application Date: 2006-10-31
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Publication No.: US07682912B2Publication Date: 2010-03-23
- Inventor: Matthias Passlack , Ravindranath Droopad , Karthik Rajagopalan
- Applicant: Matthias Passlack , Ravindranath Droopad , Karthik Rajagopalan
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming a III-V compound semiconductor structure (10) comprises providing a III-V compound semiconductor substrate including a semi-insulating substrate (12) having at least one epitaxial layer formed thereon and further having a gate insulator (14) overlying the at least one epitaxial layer. The at least one epitaxial layer formed on the semi-insulating substrate comprises an epi-structure suitable for use in the formation of a channel of a III-V compound semiconductor MOSFET device, wherein the channel (30) having a first polarity. The method further comprises forming a charge layer (22) at a surface of the gate insulator, the charge layer having a second polarity, wherein the second polarity is opposite to the first polarity.
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