Process for making a MCSFET

Invention Grant

US07682913B1 Process for making a MCSFET 有权

Title translation: 制造MCSFET的工艺

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Patent Title: Process for making a MCSFET
Patent Title (中): 制造MCSFET的工艺
Application No.: US12359731

Application Date: 2009-01-26
Publication No.: US07682913B1

Publication Date: 2010-03-23
Inventor: Xu Ouyang , Louis Lu-Chen Hsu , Xinhui Wang , Haizhou Yin
Applicant: Xu Ouyang , Louis Lu-Chen Hsu , Xinhui Wang , Haizhou Yin
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Joseph P. Abate
Main IPC: H01L21/336
IPC: H01L21/336

Abstract:

A process for making a MCSFET includes providing a first implant through a first side of an elongated stack, and then providing a second implant through a second side of the stack. The first implant has a dose different than the dose of the second implant, so that final dopant concentrations in the first and second sides differ and the transistor has two threshold voltages Vt1, Vt2.

Abstract(Chinese):

制造MCSFET的方法包括通过细长堆叠的第一侧提供第一植入物，然后通过堆叠的第二侧提供第二植入物。第一植入物具有与第二植入物的剂量不同的剂量，使得第一和第二侧中的最终掺杂剂浓度不同，并且晶体管具有两个阈值电压Vt1，Vt2。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的