Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11387854Application Date: 2006-03-24
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Publication No.: US07682927B2Publication Date: 2010-03-23
- Inventor: Takeshi Hoshi , Masahiro Kiyotoshi , Atsuko Kawasaki
- Applicant: Takeshi Hoshi , Masahiro Kiyotoshi , Atsuko Kawasaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-088177 20050325; JP2005-336773 20051122
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.
Public/Granted literature
- US20060246684A1 Method of manufacturing semiconductor device Public/Granted day:2006-11-02
Information query
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