Invention Grant
- Patent Title: Reduction in thickness of semiconductor component on substrate
- Patent Title (中): 减少衬底上的半导体组件的厚度
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Application No.: US11856769Application Date: 2007-09-18
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Publication No.: US07682936B2Publication Date: 2010-03-23
- Inventor: Toshihiko Nishio , Yasumitsu Orii , Yukifumi Oyama
- Applicant: Toshihiko Nishio , Yasumitsu Orii , Yukifumi Oyama
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Matthew C. Zehrer
- Priority: JP2006-254969 20060920
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
It is an object to reduce a thickness of a semiconductor component (chip) on a substrate to a predetermined thickness regardless of a variation in thickness of a substrate in a semiconductor product. In a semiconductor product mounted on a base plate, a surface of a semiconductor component on a substrate is set to be located at a predetermined height h from a surface of a base plate. Thereafter, through machining the surface of the semiconductor component which is adjusted to be located at the predetermined height, it is possible to make the thickness of the semiconductor component on the substrate equal to a predetermined thickness.
Public/Granted literature
- US20080067653A1 Reduction in Thickness of Semiconductor Component on Substrate Public/Granted day:2008-03-20
Information query
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