Invention Grant
- Patent Title: Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
- Patent Title (中): 处理基板的方法，使用激光束处理基板的方法和布置
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Application No.: US11286432Application Date: 2005-11-25
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Publication No.: US07682937B2Publication Date: 2010-03-23
- Inventor: Rogier Evertsen , Hans Peter Chall
- Applicant: Rogier Evertsen , Hans Peter Chall
- Applicant Address: NL Beuningen
- Assignee: Advanced Laser Separation International B.V.
- Current Assignee: Advanced Laser Separation International B.V.
- Current Assignee Address: NL Beuningen
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method and arrangement for treating a substrate processed using a laser beam, wherein said substrate comprises at least a body of semiconductor material. The method comprises a step of etching said substrate for removing from said body of semiconductor material recast material deposited on said body during said laser processing. The step of etching is controlled for removing in addition to said recast layer, at least a part of said semiconductor material of said body for improving mechanical strength of said substrate.
Public/Granted literature
- US20070123061A1 Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement Public/Granted day:2007-05-31
Information query
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