Invention Grant
- Patent Title: Use of Cl2 and/or HCl during silicon epitaxial film formation
- Patent Title (中): 在硅外延膜形成期间使用Cl2和/或HCl
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Application No.: US11227974Application Date: 2005-09-14
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Publication No.: US07682940B2Publication Date: 2010-03-23
- Inventor: Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
- Applicant: Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Dugan & Dugan, PC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
Public/Granted literature
- US20060115933A1 Use of CL2 and/or HCL during silicon epitaxial film formation Public/Granted day:2006-06-01
Information query
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