Invention Grant
US07682949B2 Laser treatment device, laser treatment method, and semiconductor device fabrication method
有权
激光治疗装置，激光治疗方法和半导体器件制造方法
- Patent Title: Laser treatment device, laser treatment method, and semiconductor device fabrication method
- Patent Title (中): 激光治疗装置，激光治疗方法和半导体器件制造方法
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Application No.: US11525956Application Date: 2006-09-25
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Publication No.: US07682949B2Publication Date: 2010-03-23
- Inventor: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2001-273482 20010910; JP2001-273770 20010910
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A semiconductor film formed on a substrate is crystallized by continuously oscillating type laser. The scanning direction of the continuously oscillating type laser and the crystallization direction are coincident with each other. Adjustment of the crystallization direction and the charge transferring direction of the thin film transistors makes control of the characteristics of the thin film transistors possible. With respect to the laser treatment device for crystallizing the semiconductor film, the beam shape of laser oscillated from the continuously oscillating type laser device is made to be elliptical by a cylindrical lens and said cylindrical lens is made rotatable and said laser beam is scanned on said substrate by a galvanomirror and said laser beam can be focused upon said substrate by f-θlens.
Public/Granted literature
- US20070017907A1 Laser treatment device, laser treatment method, and semiconductor device fabrication method Public/Granted day:2007-01-25
Information query
IPC分类:
