Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method

Invention Grant

US07682954B2 Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method 有权

Title translation: 杂质导入方法，杂质导入装置以及利用该方法制造的半导体装置

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Patent Title: Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
Patent Title (中): 杂质导入方法，杂质导入装置以及利用该方法制造的半导体装置
Application No.: US10599205

Application Date: 2005-03-17
Publication No.: US07682954B2

Publication Date: 2010-03-23
Inventor: Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
Applicant: Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
Applicant Address: JP Osaka
Assignee: Panasonic Corporation
Current Assignee: Panasonic Corporation
Current Assignee Address: JP Osaka
Agency: Pearne & Gordon LLP
Priority: JP2004-090455 20040325
International Application: PCT/JP2005/004790 WO 20050317
International Announcement: WO2005/093800 WO 20051006
Main IPC: H01L21/425
IPC: H01L21/425

Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method

Abstract:

An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.

Abstract(Chinese):

形成具有盒状杂质分布的杂质区域。杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布，形状。

Public/Granted literature

US20080142931A1 Method of Impurity Introduction, Impurity Introduction Apparatus and Semiconductor Device Produced with Use of the Method Public/Granted day:2008-06-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/42	....用辐射轰击的
H01L21/423	.....带有高能辐射的
H01L21/425	......产生离子注入的