Method of forming a contact hole in a semiconductor device

Invention Grant

US07682964B2 Method of forming a contact hole in a semiconductor device 失效

Title translation: 在半导体器件中形成接触孔的方法

Please log in to see more content

Patent Title: Method of forming a contact hole in a semiconductor device
Patent Title (中): 在半导体器件中形成接触孔的方法
Application No.: US11229685

Application Date: 2005-09-20
Publication No.: US07682964B2

Publication Date: 2010-03-23
Inventor: Kazusuke Kato
Applicant: Kazusuke Kato
Applicant Address: JP Tokyo
Assignee: Oki Semiconductor Co., Ltd.
Current Assignee: Oki Semiconductor Co., Ltd.
Current Assignee Address: JP Tokyo
Agency: Volentine & White, P.L.L.C.
Priority: JP2000-058007 20000229
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of forming a contact hole in a semiconductor device

Abstract:

A semiconductor device includes a semiconductor substrate, a lower conductive layer formed over the semiconductor substrate, an intermediate insulating layer formed over the lower conductive layer and an upper conductive layer formed over the intermediate insulating layer. The upper conductive layer crosses the lower conductive layer. The semiconductor device also includes a contact hole formed at a crossing portion of the lower conductive layer and the upper conductive layer. The contact hole is formed in the intermediate insulating layer. An aspect ratio of the contact hole is greater than 0.6.

Abstract(Chinese):

半导体器件包括半导体衬底，形成在半导体衬底上的下导电层，形成在下导电层上的中间绝缘层和形成在中间绝缘层上的上导电层。上导电层与下导电层交叉。半导体器件还包括形成在下导电层和上导电层的交叉部分处的接触孔。接触孔形成在中间绝缘层中。接触孔的纵横比大于0.6。

Public/Granted literature

US20060049446A1 Method for manufacturing a semiconductor device Public/Granted day:2006-03-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）