Method for manufacturing semiconductor device

Invention Grant

US07682965B2 Method for manufacturing semiconductor device 失效

Title translation: 制造半导体器件的方法

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Patent Title: Method for manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US11604921

Application Date: 2006-11-27
Publication No.: US07682965B2

Publication Date: 2010-03-23
Inventor: Sang Chul Kim , Han Choon Lee
Applicant: Sang Chul Kim , Han Choon Lee
Applicant Address: KR Seoul
Assignee: Dongbu Electronics Co., Ltd.
Current Assignee: Dongbu Electronics Co., Ltd.
Current Assignee Address: KR Seoul
Agency: The Law Offices of Andrew D. Fortney
Agent Andrew D. Fortney; Duangkamol Kay Strohl
Priority: KR10-2005-0126150 20051220
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for manufacturing semiconductor device

Abstract:

Provided is a method for manufacturing a semiconductor device. An insulation layer is formed on a bottom structure of a semiconductor substrate. Then, a trench and a via hole are formed by selectively etching the insulation layer, and a copper layer is deposited to fill the via hole and the trench. Next, a copper line is formed by a CMP (chemical mechanical polishing) process to planarize the copper layer, and a plasma process is performed to form a plasma-treated surface layer of the semiconductor substrate. The plasma-treated surface layer is then removed.

Abstract(Chinese):

提供一种半导体器件的制造方法。绝缘层形成在半导体衬底的底部结构上。然后，通过选择性地蚀刻绝缘层形成沟槽和通孔，并且沉积铜层以填充通孔和沟槽。接下来，通过CMP（化学机械抛光）工艺形成铜线以使铜层平坦化，并且进行等离子体处理以形成半导体衬底的等离子体处理的表面层。然后除去等离子体处理的表面层。

Public/Granted literature

US20070141833A1 Method for manufacturing semiconductor device Public/Granted day:2007-06-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）