Invention Grant
- Patent Title: Semiconductor device fabrication method
- Patent Title (中): 半导体器件制造方法
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Application No.: US11472462Application Date: 2006-06-22
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Publication No.: US07682975B2Publication Date: 2010-03-23
- Inventor: Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
- Applicant: Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-181772 20050622
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/4763
Abstract:
A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.
Public/Granted literature
- US20060293191A1 Semiconductor device fabrication method Public/Granted day:2006-12-28
Information query
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