Invention Grant
- Patent Title: Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions
- Patent Title (中): 形成相变材料层图案的方法，制造相变记忆装置的方法和相关的浆料组合物
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Application No.: US12292842Application Date: 2008-11-26
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Publication No.: US07682976B2Publication Date: 2010-03-23
- Inventor: Jong-Young Kim
- Applicant: Jong-Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0128365 20071211
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
In methods of forming a phase-change material layer pattern, an insulation layer having a recessed portion may be formed on a substrate, and a phase-change material layer may be formed on the insulation layer to fill the recessed portion. A first polishing process may be performed on the phase-change material layer using a first slurry composition to partially remove the phase-change material layer, the first slurry composition having a first polishing selectivity between the insulation layer and the phase-change material layer. A second polishing process may be performed on the phase-change material layer using a second slurry composition to form a phase-change material layer pattern in the recessed portion, the second slurry composition having a second polishing selectivity substantially lower than the first polishing selectivity.
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