Invention Grant
- Patent Title: Plasma processing method and high-rate plasma etching apparatus
- Patent Title (中): 等离子体处理方法和高速等离子体蚀刻装置
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Application No.: US11473052Application Date: 2006-06-23
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Publication No.: US07682978B2Publication Date: 2010-03-23
- Inventor: Koji Maruyama , Yusuke Hirayama
- Applicant: Koji Maruyama , Yusuke Hirayama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-184543 20050624
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A plasma processing method for use in a processing chamber of a plasma processing apparatus having a mounting table and a ceiling portion, there being formed a plasma processing space between the mounting table and the ceiling portion, includes the steps of mounting a target object on the mounting table, setting a gap between the ceiling portion and the mounting table to be greater than about 25 mm and less than about 65 mm, and performing a plasma processing on the target object by generating a plasma in the processing space. The target object includes an opening pattern having openings and at least parts of the openings are equal to or greater than about 500 μm.
Public/Granted literature
- US20060289296A1 Plasma processing method and high-rate plasma etching apparatus Public/Granted day:2006-12-28
Information query
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