Invention Grant
US07682988B2 Thermal treatment of nitrided oxide to improve negative bias thermal instability
有权
氮化氧化物的热处理以改善负偏压热不稳定性
- Patent Title: Thermal treatment of nitrided oxide to improve negative bias thermal instability
- Patent Title (中): 氮化氧化物的热处理以改善负偏压热不稳定性
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Application No.: US10930230Application Date: 2004-08-31
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Publication No.: US07682988B2Publication Date: 2010-03-23
- Inventor: Husam N. Alshareef , Rajesh Khamankar , Ajith Varghese , Cathy A. Chancellor , Anand Krishnan , Malcolm J. Bevan
- Applicant: Husam N. Alshareef , Rajesh Khamankar , Ajith Varghese , Cathy A. Chancellor , Anand Krishnan , Malcolm J. Bevan
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/8234
Abstract:
A method of reducing threshold voltage shift of a MOSFET transistor resulting after temperature and voltage stress, and an integrated circuit device fabricated according to the method. The method includes the steps of forming a nitrided dielectric layer on a semiconductor substrate, and subjecting the nitrided dielectric layer to an anneal at low pressure.
Public/Granted literature
- US20060046514A1 Thermal treatment of nitrided oxide to improve negative bias thermal instability Public/Granted day:2006-03-02
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