Invention Grant
- Patent Title: Method of manufacturing nonvolatile semiconductor memory device
- Patent Title (中): 制造非易失性半导体存储器件的方法
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Application No.: US11144593Application Date: 2005-06-06
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Publication No.: US07682990B2Publication Date: 2010-03-23
- Inventor: Hirotaka Hamamura , Toshiyuki Mine , Natsuki Yokoyama
- Applicant: Hirotaka Hamamura , Toshiyuki Mine , Natsuki Yokoyama
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2004-168325 20040607
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Conventionally, a MONOS type nonvolatile memory is fabricated by subjecting a silicon nitride film to ISSG oxidation to form a top silicon oxide film of ONO structure. If the ISSG oxidation conditions are severe, repeats of programming/erase operation cause increase of interface state density (Dit) and electron trap density. This does not provide a sufficient value of the on current, posing a problem in that the deterioration of charge trapping properties cannot be suppressed.For the solution to the problem, the silicon nitride film is oxidized by means of a high concentration ozone gas to form the top silicon oxide film.
Public/Granted literature
- US20050272198A1 Method of manufacturing nonvolatile semiconductor memory device Public/Granted day:2005-12-08
Information query
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