Invention Grant
- Patent Title: Resistance variable memory with temperature tolerant materials
- Patent Title (中): 具有耐温材料的电阻变量存储器
-
Application No.: US12153513Application Date: 2008-05-20
-
Publication No.: US07682992B2Publication Date: 2010-03-23
- Inventor: Kristy A. Campbell
- Applicant: Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/0272
- IPC: H01L31/0272
Abstract:
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device.
Public/Granted literature
- US20080225580A1 Resistance variable memory with temperature tolerant materials Public/Granted day:2008-09-18
Information query
IPC分类:
