Invention Grant
- Patent Title: Dielectric layers and memory cells including metal-doped alumina
- Patent Title (中): 介电层和记忆单元，包括金属掺杂氧化铝
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Application No.: US12345245Application Date: 2008-12-29
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Publication No.: US07683001B2Publication Date: 2010-03-23
- Inventor: Brian A. Vaartstra
- Applicant: Brian A. Vaartstra
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: C04B35/10
- IPC: C04B35/10 ; C04B35/505 ; C04B35/50
Abstract:
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
Public/Granted literature
- US20090109731A1 DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA Public/Granted day:2009-04-30
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