Invention Grant
- Patent Title: Substrate processing method and manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的基板加工方法及其制造方法
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Application No.: US11411139Application Date: 2006-04-26
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Publication No.: US07683291B2Publication Date: 2010-03-23
- Inventor: Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
- Applicant: Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-128230 20050426
- Main IPC: A21B1/00
- IPC: A21B1/00 ; C23C16/00
Abstract:
According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.
Public/Granted literature
- US20060289431A1 Substrate processing method and manufacturing method of semiconductor device Public/Granted day:2006-12-28
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