Invention Grant
US07683364B2 Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants
有权
门控量子谐振隧道二极管采用CMOS晶体管，具有改进的口袋和LDD种植体
- Patent Title: Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants
- Patent Title (中): 门控量子谐振隧道二极管采用CMOS晶体管，具有改进的口袋和LDD种植体
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Application No.: US12204604Application Date: 2008-09-04
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Publication No.: US07683364B2Publication Date: 2010-03-23
- Inventor: Henry Litzmann Edwards , Chris Bowen , Tathagata Chatterjee
- Applicant: Henry Litzmann Edwards , Chris Bowen , Tathagata Chatterjee
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/88
- IPC: H01L29/88 ; H01L29/775 ; H01L21/336
Abstract:
A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Source and drain regions adjacent to the barrier regions control current flow in and out of the quantum well. The GRTD may be integrated in CMOS ICs as a quantum dot or a quantum wire device. The GRTD may be operated in a negative conductance mode, in a charge pump mode and in a radiative emission mode.
Public/Granted literature
- US20090057651A1 Gated Quantum Resonant Tunneling Diode Using CMOS Transistor with Modified Pocket and LDD Implants Public/Granted day:2009-03-05
Information query
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