Invention Grant
US07683369B2 Structure for measuring body pinch resistance of high density trench MOSFET array
有权
用于测量高密度沟槽MOSFET阵列的体夹电阻的结构
- Patent Title: Structure for measuring body pinch resistance of high density trench MOSFET array
- Patent Title (中): 用于测量高密度沟槽MOSFET阵列的体夹电阻的结构
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Application No.: US12100554Application Date: 2008-04-10
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Publication No.: US07683369B2Publication Date: 2010-03-23
- Inventor: Moses Ho , Tiesheng Li , Il Kwan Lee
- Applicant: Moses Ho , Tiesheng Li , Il Kwan Lee
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: CH Emily LLC
- Agent Chein-Hwa Tsao
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A structure is disclosed for measuring body pinch resistance Rp of trench MOSFET arrays on a wafer. The trench MOSFET array has a common drain layer of first conductivity type and a 2D-trench MOSFET array atop the common drain layer. The 2D-trench MOSFET array has an interdigitated array of source-body columns and gate trench columns. Each source-body column has a bottom body region of second conductivity type with up-extending finger structures. Each source-body column has top source regions of first conductivity type bridging the finger structures. The structure includes:a) A source-body column wherein each finger structure of the bottom body region has a formed top contact electrode.b) Two gate trench columns flank the source-body column and both have a formed top common gate contact electrode.Upon connection of the structure to external voltage/current measurement devices, Rp can be measured while mimicking the parasitic effect of neighboring trench MOSFETs.
Public/Granted literature
- US20090256149A1 Structure for Measuring Body Pinch Resistance of High Density Trench MOSFET Array Public/Granted day:2009-10-15
Information query
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