Invention Grant
- Patent Title: Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
- Patent Title (中): 源极/漏极，晶体管基板及其制造方法以及显示装置
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Application No.: US11461927Application Date: 2006-08-02
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Publication No.: US07683370B2Publication Date: 2010-03-23
- Inventor: Toshihiro Kugimiya , Hiroshi Gotoh
- Applicant: Toshihiro Kugimiya , Hiroshi Gotoh
- Applicant Address: JP Kobe-shi
- Assignee: Kobe Steel, Ltd.
- Current Assignee: Kobe Steel, Ltd.
- Current Assignee Address: JP Kobe-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt L.L.P.
- Priority: JP2005-236993 20050817
- Main IPC: H01L31/0224
- IPC: H01L31/0224
Abstract:
In a thin-film transistor substrate including a substrate, a thin-film transistor semiconductor layer, a source/drain electrode, and a transparent pixel electrode, the source/drain electrode includes a thin film of an aluminum alloy containing 0.1 to 6 atomic percent of nickel as an alloy element, and the aluminum alloy thin film is directly connected to the thin-film transistor semiconductor layer.
Public/Granted literature
- US20070040173A1 SOURCE/DRAIN ELECTRODES, TRANSISTOR SUBSTRATES AND MANUFACTURE METHODS, THEREOF, AND DISPLAY DEVICES Public/Granted day:2007-02-22
Information query
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