Invention Grant
- Patent Title: Semiconductor apparatus and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12219377Application Date: 2008-07-21
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Publication No.: US07683372B2Publication Date: 2010-03-23
- Inventor: Hitomi Ushitani , Shou Nagao , Tomoyuki Iwabuchi
- Applicant: Hitomi Ushitani , Shou Nagao , Tomoyuki Iwabuchi
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2002-309600 20021024
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
The present invention is to carry out stable doping and to prevent the drastic pressure change in a treatment chamber by reducing degasification of resist during adding impurities. In the present invention, the stability of the impurity ion injection can be ensured by reducing degasification of resist by reducing the area (resist area proportion, that is, the ratio of the area of resist to the whole area of a substrate) of resist pattern which is used depending on the conditions such as acceleration voltage or current density of a doping process.
Public/Granted literature
- US20090039430A1 Semiconductor apparatus and method for manufacturing the same Public/Granted day:2009-02-12
Information query
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