Invention Grant
- Patent Title: Silicon based photodetector
- Patent Title (中): 硅基光电探测器
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Application No.: US11288900Application Date: 2005-11-29
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Publication No.: US07683374B2Publication Date: 2010-03-23
- Inventor: Cha-Hsin Lin , Lurng-Shehng Lee , Ching-Chiun Wang
- Applicant: Cha-Hsin Lin , Lurng-Shehng Lee , Ching-Chiun Wang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Alston & Bird LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/04 ; H01L29/76 ; H01L31/062 ; H01L31/113
Abstract:
A method of fabricating a photodetector device includes preparing a silicon substrate, forming a patterned mesa on the silicon substrate, and forming a patterned conductive layer over the patterned mesa.
Public/Granted literature
- US20070122934A1 Silicon-based photodetector and method of fabricating the same Public/Granted day:2007-05-31
Information query
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