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US07683378B2 Light emitting diode and method for fabricating same 失效
发光二极管及其制造方法

Light emitting diode and method for fabricating same
Abstract:
An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={λ0/(4×n1)}×α  (1), t2={λ0/(4×n2)}×(2−α)  (2), and 0.5
Abstract(Chinese):

基于AlGaInP的发光二极管设置有分布式布拉格反射器，其包括AlGaAs层和AlInP层的组合，每层具有由下式（1）至（3）确定的膜厚：t1 = {λ0/（4× n1）}×α（1），t2 = {λ0/（4×n2）}×（2-α）（2）和0.5 <α<0.9（3）其中t1是膜厚[nm] AlGaAs层，t2是AlInP层的膜厚度[nm]，λ0是被反射光的波长[nm]，n1是AlGaAs层相对于要反射的光的波长的折射率，以及 n2是AlInP层相对于要反射的光的波长的折射率。

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