Invention Grant
US07683386B2 Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
有权
具有突起的半导体发光器件，以提高外部效率和晶体生长
- Patent Title: Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
- Patent Title (中): 具有突起的半导体发光器件，以提高外部效率和晶体生长
-
Application No.: US10920419Application Date: 2004-08-18
-
Publication No.: US07683386B2Publication Date: 2010-03-23
- Inventor: Hisanori Tanaka , Yasunobu Hosokawa , Yuuki Shibutani
- Applicant: Hisanori Tanaka , Yasunobu Hosokawa , Yuuki Shibutani
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2003-294775 20030819
- Main IPC: H01L29/18
- IPC: H01L29/18
Abstract:
A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.
Public/Granted literature
- US20050179130A1 Semiconductor device Public/Granted day:2005-08-18
Information query
IPC分类:
