A nitride-based semiconductor LED comprises an anode; a first p-type clad layer having a second n-type clad layer coming in contact with the anode, the first p-type clad layer being formed under the anode such that a portion of the first p-type clad layer comes in contact with the anode; an active layer formed under the first p-type clad layer; a first n-type clad layer having a second p-type clad layer which does not come in contact with the active layer, the first n-type clad layer being formed on the entire lower surface of the active layer; and a cathode formed under the first n-type clad layer and the second p-type clad layer so as to come in contact with a portion of the first n-type clad layer and the second p-type clad layer.