The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the LED's are provided with a rounded mesa configuration. In a specific embodiment, the p-type metal is positioned upon a rounded mesa, such as a parabolic mesa, formed out of the base structure materials.