Invention Grant
- Patent Title: Semiconductor device with anisotropy-relaxed quantum dots
- Patent Title (中): 具有各向异性松弛量子点的半导体器件
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Application No.: US11390151Application Date: 2006-03-28
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Publication No.: US07683392B2Publication Date: 2010-03-23
- Inventor: Kenichi Kawaguchi
- Applicant: Kenichi Kawaguchi
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2005-369468 20051222; JP2006-007234 20060116
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor quantum dot device includes: an inclined InP substrate whose principal surface normal is inclined from a [001] direction to a [1 −10] direction in a (001) plane; and semiconductor quantum dots made of InAs1-xSbx (0
Public/Granted literature
- US20070145351A1 Semiconductor device with anisotropy-relaxed quantum dots Public/Granted day:2007-06-28
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