Invention Grant
- Patent Title: Stacked memory and method for forming the same
- Patent Title (中): 堆积记忆及其形成方法
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Application No.: US11709234Application Date: 2007-02-22
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Publication No.: US07683404B2Publication Date: 2010-03-23
- Inventor: Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Hoo-Sung Cho , Jong-Hyuk Kim
- Applicant: Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Hoo-Sung Cho , Jong-Hyuk Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0089314 20060914
- Main IPC: H01L25/065
- IPC: H01L25/065
Abstract:
A stacked memory includes at least two semiconductor layers each including a memory cell array. A transistor is formed in a peripheral circuit region of an uppermost semiconductor layer of the at least two semiconductor layers. The transistor is used to operate the memory cell array.
Public/Granted literature
- US20080067573A1 Stacked memory and method for forming the same Public/Granted day:2008-03-20
Information query
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