Invention Grant
- Patent Title: Semiconductor device and method for forming the same
- Patent Title (中): 半导体装置及其形成方法
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Application No.: US11517422Application Date: 2006-09-08
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Publication No.: US07683406B2Publication Date: 2010-03-23
- Inventor: Sang Don Lee
- Applicant: Sang Don Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2004-0063167 20040811
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
The present invention is related to semiconductor device and method for manufacturing the same. In accordance with the semiconductor device and method for manufacturing the same, at least one opening extending between LDD regions and exposing a buried insulating layer is formed so that a gate electrode surrounds the surface of a channel region. This structure allows the formation of a relatively a thick channel region and decreases the sensitivity of characteristics of the device dependent upon the thickness of the channel region.
Public/Granted literature
- US20070001198A1 Semiconductor device and method for forming the same Public/Granted day:2007-01-04
Information query
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