Invention Grant
- Patent Title: Double sided container capacitor for a semiconductor device
- Patent Title (中): 用于半导体器件的双面容器电容器
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Application No.: US11517045Application Date: 2006-09-07
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Publication No.: US07683413B2Publication Date: 2010-03-23
- Inventor: Thomas M. Graettinger , Marsela Pontoh , Thomas A. Figura
- Applicant: Thomas M. Graettinger , Marsela Pontoh , Thomas A. Figura
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell dielectric layer, and a second cell dielectric layer is formed on the second bottom plate layers. Finally, a second top plate layer is formed on the second cell dielectric layer, and the first and second top plate layers are electrically connected using a conductive plug or conductive spacer. An inventive structure formed using the inventive method is also described.
Public/Granted literature
- US20070001207A1 Double sided container capacitor for a semiconductor device and method for forming same Public/Granted day:2007-01-04
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