Invention Grant
US07683417B2 Memory device with memory cell including MuGFET and fin capacitor
有权
具有存储单元的存储器件包括MuGFET和鳍式电容器
- Patent Title: Memory device with memory cell including MuGFET and fin capacitor
- Patent Title (中): 具有存储单元的存储器件包括MuGFET和鳍式电容器
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Application No.: US11924817Application Date: 2007-10-26
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Publication No.: US07683417B2Publication Date: 2010-03-23
- Inventor: Weize Xiong , Andrew Marshall , Cloves Rinn Cleavelin , Howard Lee Tigelaar
- Applicant: Weize Xiong , Andrew Marshall , Cloves Rinn Cleavelin , Howard Lee Tigelaar
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
One embodiment of the present invention relates to a memory cell. The memory cell includes a multi-gate field effect transistor associated with a first region of a semiconductor fin. The memory cell also includes a fin capacitor coupled to a drain of the multi-gate field effect transistor and associated with a second region of the semiconductor fin, where the fin capacitor has an approximately degenerate doping concentration in the second region. Other devices and methods are also disclosed.
Public/Granted literature
- US20090108316A1 MEMORY DEVICE WITH MEMORY CELL INCLUDING MUGFET AND FIN CAPACITOR Public/Granted day:2009-04-30
Information query
IPC分类:
