Invention Grant
US07683438B2 Self-aligned double layered silicon-metal nanocrystal memory element, method for fabricating the same, and memory having the memory element
失效
自对准双层硅金属纳米晶体存储元件，其制造方法以及具有存储元件的存储器
- Patent Title: Self-aligned double layered silicon-metal nanocrystal memory element, method for fabricating the same, and memory having the memory element
- Patent Title (中): 自对准双层硅金属纳米晶体存储元件，其制造方法以及具有存储元件的存储器
-
Application No.: US12125778Application Date: 2008-05-22
-
Publication No.: US07683438B2Publication Date: 2010-03-23
- Inventor: Pei-Ren Jeng
- Applicant: Pei-Ren Jeng
- Applicant Address: TW Hsinchu Hsien
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu Hsien
- Agency: WPAT, P.C.
- Agent Anthony King; Kay Yang
- Priority: TW94138939A 20051107
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a plurality of metal nanocrystals, and leaving intact the polysilicon disposed beneath and thereby covered with the plurality of metal nanocrystals, with a view to forming double layered silicon-metal nanocrystals by self-alignment.
Public/Granted literature
Information query
IPC分类:
