Invention Grant
US07683456B2 Semiconductor devices, capacitor antifuses, dynamic random access memories, and cell plate bias connection methods
有权
半导体器件，电容器反熔丝，动态随机存取存储器和单元板偏置连接方法
- Patent Title: Semiconductor devices, capacitor antifuses, dynamic random access memories, and cell plate bias connection methods
- Patent Title (中): 半导体器件，电容器反熔丝，动态随机存取存储器和单元板偏置连接方法
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Application No.: US11129630Application Date: 2005-05-13
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Publication No.: US07683456B2Publication Date: 2010-03-23
- Inventor: H. Montgomery Manning
- Applicant: H. Montgomery Manning
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
In one aspect, a semiconductor device includes an array of memory cells. Individual memory cells of the array include a capacitor having first and second electrodes, a dielectric layer disposed between the first and second electrodes. Select individual capacitors are energized so as to blow the dielectric layer to establish a connection between the first and second electrodes such that, after blowing the dielectric layer, the second electrode is coupled to a cell plate generator establishing a bias connection therebetween. Cell plate bias connection methods are also described.
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Information query
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