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US07683457B2 Group I-VII semiconductor single crystal thin film and process for producing same 失效
I-VII族半导体单晶薄膜及其制造方法

Group I-VII semiconductor single crystal thin film and process for producing same
Abstract:
A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.
Abstract(Chinese):

通过MBE法在CaF 2（111）衬底（2）上形成CaF 2缓冲层（3）。 此外，通过MBE法在CaF 2缓冲层（3）上生长CuCl薄膜，同时用电子束照射形成电子束照射膜（1a）。 随后，通过MBE方法生长CuCl薄膜而不照射电子束以形成电子束非照射膜（1b），由此形成包括电子束照射膜（1a）的CuCl薄膜（a） 和电子束非照射膜（1b）。 因此，可以形成表现出高平坦度和结晶度的CuCl薄膜（1）。

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